Silicon carbide deposited by high density plasma chemical-vapor deposition with bias

摘要

A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 10¹¹ ions/cm³ is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm², is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.