METHOD OF FORMING A SHALLOW TRENCH ISOLATION STRUCTURE FEATURING A GROUP OF INSULATOR LINER LAYERS LOCATED ON THE SURFACE OF A SHALLOW TRENCH SHAPE

摘要

METHOD OF FORMING A SHALLOW TRENCH ISOLATION STRUCTUREFEATURING A GROUP OF INSULATOR LINER LAYERS LOCATED ON THESURFACES OF A SHALLOW TRENCH SHAPEABSTRACTA process for forming a shallow trench isolation (STI), structure in a semiconductorsubstrate, featuring a group of insulator liner layers located on the surfaces of the shallow trenchshape used to accommodate the STI structure, has been developed. After defining a shallowtrench shape featuring rounded corners, a group of thin insulator liner layers, each comprised ofeither silicon oxide or silicon nitride, is deposited on the exposed surfaces of the shallow trenchshape via atomic layer depositing (ALD), procedures. A high density plasma procedure is usedfor deposition of silicon oxide, filling the shallow trench shape which is lined with the group ofthin insulator liner layers. The silicon nitride component of the insulator liner layers, preventsdiffusion or segregation of P type dopants from an adjacent P well region to the silicon oxide ofthe STI structure.(Figure 7)