首页> 外国专利> LARGE AREA FABRICATION METHOD BASED ON THE LOCAL OXIDATION OF SILICON AND/OR DIFFERENT MATERIALS ON MICRO- AND NANO-SCALE

LARGE AREA FABRICATION METHOD BASED ON THE LOCAL OXIDATION OF SILICON AND/OR DIFFERENT MATERIALS ON MICRO- AND NANO-SCALE

机译:基于硅和/或不同材料在微尺度和纳米尺度上局部氧化的大面积制造方法

摘要

Process for local oxidation of a surface to be oxidized on micro and nano scale, including: i) the application of a stamp, made of or covered with a conductive material, with motives in relief of sub-micrometer or nanometer size, on or over said surface to be oxidized, in an atmosphere of gas having a controlled content of electrolyte vapours and ii) the application of an electric voltage between the stamp, connected to the negative pole, and the surface to be oxidized, connected to the positive pole.
机译:在微米和纳米级上对要氧化的表面进行局部氧化的方法,包括:i)在导电材料之上或之上施加由导电材料制成或覆盖的压模,其动机可以缓解亚微米或纳米尺寸在具有受控的电解质蒸汽含量的气体气氛中,所述待氧化表面;和ii)在连接至负极的压模和连接至正极的待氧化表面之间施加电压。

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