首页> 外国专利> SEMICONDUCTOR DEVICE HAVING DELAY CIRCUIT WITH MAXIMUM CHANGE DELAY CHARACTERISTICS, INCLUDING PLURAL RESISTANCE UNITS CONNECTED WITH EACH POWER SUPPLY VOLTAGE NODE OF ODD UNIT DELAYS

SEMICONDUCTOR DEVICE HAVING DELAY CIRCUIT WITH MAXIMUM CHANGE DELAY CHARACTERISTICS, INCLUDING PLURAL RESISTANCE UNITS CONNECTED WITH EACH POWER SUPPLY VOLTAGE NODE OF ODD UNIT DELAYS

机译:具有最大变化延迟特性的延迟电路的半导体设备,包括与奇数个单位延迟的每个电源电压节点相连的复电阻单元

摘要

PURPOSE: A semiconductor device having a delay circuit with maximum change delay characteristics is provided to reduce the malfunction of the semiconductor device by making a maximum delay time change in the delay circuit during the change of external power supply voltage. CONSTITUTION: A semiconductor device having a delay circuit with maximum change delay characteristics comprises a delay part(10-16) having unit delays cascade connected in plural stages for delaying an input signal; plural resistance units(30,32) connected with each power supply voltage node of odd unit delays among the unit delays of the delay part; plural capacitor units(20,22) of which one node is connected with each control voltage applying node separated from the power supply voltage node, and the other node is connected with each output node of the odd unit delays in order to form RC delay respectively.
机译:用途:提供一种具有具有最大变化延迟特性的延迟电路的半导体器件,以通过在外部电源电压变化期间在延迟电路中进行最大延迟时间变化来减少半导体器件的故障。构成:一种具有具有最大变化延迟特性的延迟电路的半导体器件,其特征在于,具有延迟部(10-16),该延迟部具有级联的单元延迟级联,用于延迟输入信号。多个电阻单元(30,32)与延迟部分的单位延迟中的奇数单位延迟的每个电源电压节点连接;多个电容器单元(20,22),其一个节点与与电源电压节点分开的每个控制电压施加节点相连,另一节点与奇数单位延迟的每个输出节点相连,以便分别形成RC延迟。

著录项

  • 公开/公告号KR20040109986A

    专利类型

  • 公开/公告日2004-12-29

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030039637

  • 发明设计人 LEE YU MI;

    申请日2003-06-19

  • 分类号G11C7/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:22

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