首页>
外国专利>
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ANNEALING ON SEMICONDUCTOR SUBSTRATE WITH LARGE AND SMALL MASS IONS
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ANNEALING ON SEMICONDUCTOR SUBSTRATE WITH LARGE AND SMALL MASS IONS
展开▼
机译:在大质量和小质量离子的半导体衬底上退火制造半导体器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A method of manufacturing a semiconductor device is provided to restrain TED(Transient Enhanced Diffusion), to increase the activation ratio of implanted ions and to prevent the damage of a semiconductor substrate by performing annealing after mixing large mass ions with small mass ions. CONSTITUTION: A tunnel oxide layer(16), a floating gate electrode(18), a dielectric film(20) and a control gate electrode(22) are sequentially formed on a semiconductor substrate(10). A first ion-implantation of large mass ions is performed on the resultant structure by using the control gate electrode as a mask. A source and drain region(26) are formed in the substrate by performing a second ion-implantation on the resultant structure using small mass ions. Annealing is performed thereon.
展开▼