FORMING METHOD OF TUNGSTEN METAL LINE CAPABLE OF IMPROVING STEP COVERAGE OF DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

Purpose: a method of forming of tungsten metal wire and the manufacturing method using identical semiconductor device are provided to by improving the stepcoverage of One Diffusion Process barrier layer and are effectively prevented volcano defects. Construction: a titanium film (25) is formed in semi-conductive substrate (20). The first TiN layers (26a) the Ti films being formed in through IMP (ion metal plasma) sedimentation as the first diffusion barrier. The 2nd TiN layers (26b) the first TiN layers be formed in through MOCVD (Metal organic chemical vapor deposition) method as the second diffusion barrier. Then, a tungsten film (27) is formed in diffusion barrier layer.