首页>
外国专利>
INDUCTIVELY COUPLED PLASMA GENERATING APPARATUS WITH HIGH PLASMA UNIFORMITY AND PLASMA UNIFORMITY CONTROL METHOD USING THE SAME TO MAKE INSIDE OF CHAMBER MAINTAIN OPTIMUM PLASMA UNIFORMITY
INDUCTIVELY COUPLED PLASMA GENERATING APPARATUS WITH HIGH PLASMA UNIFORMITY AND PLASMA UNIFORMITY CONTROL METHOD USING THE SAME TO MAKE INSIDE OF CHAMBER MAINTAIN OPTIMUM PLASMA UNIFORMITY
PURPOSE: An inductively coupled plasma generating apparatus with high plasma uniformity is provided to make the inside of a chamber maintain optimum plasma uniformity by previously storing a value when a plurality of source gases capable of being used in etching a substrate have optimum plasma uniformity in a chamber and by using the previously stored value in performing an etch process on a real substrate. CONSTITUTION: A chamber(200) has an electrostatic chuck in which a substrate is installed. Power is applied by a high frequency power supply. A gas injection part injects source gas to the inside of the chamber. A plurality of antennas(220) receive the power from the high frequency power supply, interconnected in parallel with each other and located on the gas injection part. A plurality of sensors(230) are connected to the plurality of antennas, respectively. A variable capacitor is connected between one of the plurality of antennas and its corresponding sensor. A controller(240) receives and stores a measurement valve from the plurality of sensors and controls the variable capacitor, connected to the plurality of sensors and the variable capacitor.
展开▼