METHOD OF MANUFACTURING MOS TRANSISTOR WITH INCREASED CHANNEL WIDTH FOR INCREASING SIZE OF CHANNEL REGION WITHOUT INCREASE OF LINE WIDTH OF GATE ELECTRODE

摘要

PURPOSE: A method of manufacturing an MOS(Metal Oxide Semiconductor) transistor with an increased channel width is provided to improve electrical properties by increasing the size of a channel region without the increase of line width of a gate electrode using a trench. CONSTITUTION: Isolation layers(102) for defining an active region are formed in a semiconductor substrate(100). A well(104,106) is formed in the substrate of the active region. A trench is formed in the substrate along a channel length. A gate insulating layer(110) and a gate electrode(112) are sequentially formed along the substrate of the active region. A spacer made of an insulating layer is formed at both sidewalls of the gate electrode.