METHOD FOR FORMING CONTACT AND METAL INTERCONNECTION IN PROCESS OF 0.13 MICROMETER OR LOWER TO IMPROVE YIELD AND REDUCE CELL SIZE

摘要

Purpose: a kind of method is used to form contact and 1A metal interconnection during 13 microns or lower is arranged to improve yield and reduce by a barrel hole size to guarantee a process margin, when more stably executing a copper interconnection process. Construction: isolation is formed in a silicon substrate (100). One gate structure (102), which includes that gate oxide and one are poly-, to be formed. After an ILD (layer insulation) (106) is formed, a planarization process is performed. Contact (108) is formed in gate structure to execute the metal interconnection process on gate structure. After a Ta layers (110) are formed, by using a M1 masks in contact, Ta layers are patterned. First cover (112), an IMD (electricity is situated between metal) (114) and the second cap rock are sequentially formed on Ta layers and form a kind of metal by a damascene method. One contact hole is by using a contact mask to be formed. A metal trench etch process will carry out forming a kind of metal. One barrier layer is formed by using a Ta/TaN layers to bury spatial mode by contact corrosion process and metal valley etch process, so that metal interconnection is formed. What A metal layer was made of copper is deposited to a kind of metal of form. One planarization process will carry out one metal wire of isolation.