CMOS IMAGE SENSOR AND FABRICATING METHOD THEREOF TO SOLVE PROBLEM OF DARK CURRENT IN SPCM

摘要

Purpose: CMOS (complementary metal oxide semiconductor) image sensor is arranged to dark current and resolves contradiction in a SPCM (single frame capture mode) by manufacturing a CMOS image sensor, it has the doping region for surrounding a floating diffusion region, and there is a conduction type mutually to oppose the floating diffusion region and by blocking the leakage current as caused by an electron stream for such doping region. Construction: a pinned photodiode plays a photo detection unit. Is one transmission transistor transmitted from the optical charge that pinned photodiode generates to a N? + floating diffusion region (190). Does is one reset transistor emitted on the charge of the storage of N? + floating diffusion region. N? is+floating diffusion region surround by P? doping region (200).