首页> 外国专利> Method for forming composite vapor-deposited film having varied film composition at initial and final stages of vapor deposition, composite vapor-deposition material for producing the same, and method for producing the composite vapor-deposition material

Method for forming composite vapor-deposited film having varied film composition at initial and final stages of vapor deposition, composite vapor-deposition material for producing the same, and method for producing the composite vapor-deposition material

机译:在气相沉积的初始阶段和最终阶段形成具有不同膜组成的复合气相沉积膜的方法,用于制备该复合气相沉积膜的材料以及用于制备该复合气相沉积材料的方法

摘要

The composite deposition film suitable for deposition on a fluorescent screen, such as color television kinescope, one side of the vapor deposition film has a high light reflection factor, the other side is open composite deposited film forming method having a property of absorbing light and a deposition layer of the composite It discloses a composite material suitable for the vacuum evaporation deposition. The deposited material has a composite aluminum envelope with a low vapor pressure of the metal / semi-metal compound powder in the core region of the envelope. The low vapor pressure of the metal / semi-metal compound powder is dispersed in the core region is maintained at the aluminum. The vacuum vapor deposition carried out using the composite evaporation material is to produce nearly 100% of an aluminum composition in the deposited initially, then even if heat treatment is applied comprising a low vapor pressure metal / semi-metal compound powder that is not diffused into the aluminum layer formed on the deposition end to form a layer. Thus, a high reflection layer, the light reflection factor can be maintained.
机译:适用于在彩色电视显像管等荧光屏上进行沉积的复合沉积膜,气相沉积膜的一侧具有高的光反射系数,另一侧是具有吸收光的特性的开放式复合沉积膜形成方法,并且复合材料的沉积层公开了适用于真空蒸发沉积的复合材料。沉积的材料具有铝制复合外壳,在外壳的核心区域中金属/半金属化合物粉末的蒸气压低。金属/半金属化合物粉末的低蒸气压分散在核心区域,保持在铝。使用复合蒸发材料进行的真空气相沉积最初将在沉积物中产生近100%的铝成分,然后即使进行了热处理,包括不扩散到其中的低蒸气压金属/半金属化合物粉末在沉积端上形成的铝层形成一层。因此,在高反射层的情况下,可以维持光反射率。

著录项

  • 公开/公告号KR100500744B1

    专利类型

  • 公开/公告日2005-07-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010035255

  • 发明设计人 후루이치신지;

    申请日2001-06-21

  • 分类号H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-21 22:03:37

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