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Method for uniformizing a neutron magneticflux to the radial direction in the neutron transmutation doping technology

机译:中子trans变掺杂技术中沿径向均匀化中子磁通的方法

摘要

The present invention relates to a method according to the neutron conversion doping technique, to equalize the neutron flux between the center and the peripheral portion of the silicon ingot equalize the neutron flux in accordance with the radial direction of suitable silicon ingot, a predetermined gap between a plurality of silicon ingots leave to the neutron flux between the center and the peripheral portion of the silicon ingot is characterized in that uniform after inserting a plurality of neutron scattering layer is irradiated with neutrons in a nuclear reactor by neutron scattering by the neutron scattering layer. Accordingly, the present invention is inserted between the silicon ingot can be through the neutron scattering of the neutron scattering layer for delivering the neutron to the center silicon ingot equalize the neutron flux between the center and the peripheral portion of the silicon ingot's high quality high power single-crystal silicon for semiconductor devices the can be prepared.
机译:本发明涉及一种根据中子转换掺杂技术的方法,用于使硅锭的中心和外围部分之间的中子通量相等,以根据合适的硅锭的径向使中子通量相等。多个硅锭留在硅锭的中心和外围部分之间的中子通量,其特征在于,在插入多个中子散射层之后,通过中子散射层的中子散射,中子在核反应堆中被中子辐照均匀。 。因此,将本发明插入硅锭之间可以通过中子散射层的中子散射,用于将中子输送到中心硅锭,以均衡硅锭的高质量和高功率的中心与外围部分之间的中子通量。可以制备用于半导体器件的单晶硅。

著录项

  • 公开/公告号KR100525463B1

    专利类型

  • 公开/公告日2005-11-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20030058898

  • 发明设计人 강창무;박창수;

    申请日2003-08-25

  • 分类号C30B29/06;

  • 国家 KR

  • 入库时间 2022-08-21 22:03:16

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