Device for processing a silicon substrate comprises evacuating stations, a silicon deep etching chamber, a plasma chamber and a chlorine trifluoride etching chamber

摘要

Device for processing a silicon substrate comprises evacuating stations (12, 30) for introducing and removing silicon substrates (14), a silicon deep etching chamber (16) for etching a micromechanical structure from the substrates, a plasma chamber (18) as oxide and Teflon etching chamber or as Teflon deposition chamber, and a chlorine trifluoride etching chamber (20) as a further silicon etching chamber with an evacuating handling station (32) for the substrates. The components of the device together form a multiple chamber arrangement which can be extended by further integrated or coupled stations.