Power semiconductor component with field zone-field electrode structures has third semiconductor zone of first conductor type with common boundary surface with first semiconductor zone and electrically connected to field electrode

摘要

The device has a semiconductor body with a first and second semiconductor zones (20a,20b) of first and second conductor types, a field electrode (31) connected to the zones, a pn junction (33) between the first and second semiconductor zones and a third zone (20c) of the first conductor type with a common boundary surface with the first zone and electrically connected to the field electrode.