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Average radiation power determination method for a light source, especially a UV, deep UV or extreme UV light source used in semiconductor lithography, involves comparison of average radiation power with a test radiation source
Average radiation power determination method for a light source, especially a UV, deep UV or extreme UV light source used in semiconductor lithography, involves comparison of average radiation power with a test radiation source
Method for determining an average radiation power of radiation emitted for a given time period within a given time interval has the following steps: provision of a reflector arrangement to reflect radiation from the source whose average power is to be determined and from a test radiation source; irradiation of the reflector surface with both radiation sources and determination of the average radiation power of the source being measured by comparison with the power measurement of the test or reference source. An independent claim is made for a device for irradiation of the surface of a material with radiation of given power.
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