首页> 外国专利> Average radiation power determination method for a light source, especially a UV, deep UV or extreme UV light source used in semiconductor lithography, involves comparison of average radiation power with a test radiation source

Average radiation power determination method for a light source, especially a UV, deep UV or extreme UV light source used in semiconductor lithography, involves comparison of average radiation power with a test radiation source

机译:光源(尤其是半导体光刻中使用的紫外线,深紫外线或极紫外线光源)的平均辐射功率确定方法涉及将平均辐射功率与测试辐射源进行比较

摘要

Method for determining an average radiation power of radiation emitted for a given time period within a given time interval has the following steps: provision of a reflector arrangement to reflect radiation from the source whose average power is to be determined and from a test radiation source; irradiation of the reflector surface with both radiation sources and determination of the average radiation power of the source being measured by comparison with the power measurement of the test or reference source. An independent claim is made for a device for irradiation of the surface of a material with radiation of given power.
机译:用于确定在给定时间间隔内给定时间段内发射的辐射的平均辐射功率的方法具有以下步骤:提供反射器装置,以反射来自要确定其平均功率的源和测试辐射源的辐射;通过与测试源或参考源的功率测量值比较来测量两个辐射源对反射器表面的辐射,并确定所测量的辐射源的平均辐射功率。独立地提出了一种用于以给定功率的辐射来辐射材料表面的装置。

著录项

  • 公开/公告号DE102004008500A1

    专利类型

  • 公开/公告日2005-09-08

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20041008500

  • 发明设计人 SCHWARZL SIEGFRIED;WURM STEFAN;

    申请日2004-02-20

  • 分类号G01J1/10;

  • 国家 DE

  • 入库时间 2022-08-21 22:00:53

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