Electronic box or optoelectronics thermal - regulating a bottom alveolar highly integrating a system of regulation and heat dissipation by the peltier effect thermoelectric ()

摘要

Heat-regulating (opto)electronic housing with a thermoelectric cooling system comprises a ceramic base with a cavity occupied by semiconductor components placed between the bottom of the cavity and another ceramic plate. Heat-regulating (opto)electronic housing (1) comprises a ceramic base (3) forming one plate of a thermoelectric cooling system, a ceramic or metal frame (7), connecting pins mounted in the housing by means of ceramic inserts when the frame is metallic or integrated into the ceramic of the base or frame when the frame is ceramic, means for fixing the housing onto a support, optionally at least one orifice in the case of optoelectronic housings, and another ceramic plate (5) associated with semiconductors (6). The ceramic base comprises a cavity (2) whose sides are oriented towards the inside and/or outside of the housing and which is occupied by semiconductor components placed between the bottom of the cavity and the other ceramic plate. An independent claim is also included for producing a ceramic base as above by suspending powdered ceramic materials in an organic liquid; casting ceramic sheets from the suspension; drying the sheets; screen-printing the sheets with conductors, sealing tracks and brazing tracks using an ink comprising a refractory metal powder, a liquid organic matrix and a solvent; evaporating the solvent from the ink; boring through-holes in the sheets; filling the through-holes with an ink or paste comprising metal particles dispersed in a liquid organic matrix comprising a solvent; stacking different sheets shaped, cut and screen-printed so as to form a cavity; optionally boring holes for fixing connectors; compressing the stack into a homogeneous block; evacuating residual organic materials; fritting the ceramic at 1350[deg]C or more; assembling the ceramic or metal frame and connecting pins on the base by brazing at 275-800[deg]C; and soldering semiconductors to the base at 130-240[deg]C.