Non-volatile memory e.g. flash memory, cell erasing or programming method, involves applying memory cell state fixation pulse on floating gate of transistor, and adjusting cell state fixing portion at preset duration

摘要

The method involves applying a memory cell state fixation pulse on a floating gate of a transistor of the cell of a non-volatile memory. A high voltage signal for adjusting the cell state fixing portion is applied on a ramp voltage generation circuit (301) of the memory from outside the memory at a preset duration. The cell state fixing portion is adjusted at the preset duration. An independent claim is also included for a non volatile memory.