METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL GROWN BY THE METHOD, SINGLE CRYSTAL INGOT AND SILICON CARBIDE SINGLE CRYSTAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for stably growing a large-diameter silicon carbide single crystal with few crystal defects.;SOLUTION: A membrane crystal formed on a silicon carbide substrate which is used as a seed is grown. Preferably, the membrane crystal is composed of a single crystal epitaxial growth layer.;COPYRIGHT: (C)2006,JPO&NCIPI