SUBSTRATE FOR FORMATION OF (111)-ORIENTED PZT-TYPE DIELECTRIC FILM AND (111)-ORIENTED PZT-TYPE DIELECTRIC FILM FORMED BY USING THE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a substrate for the formation of a (111)-oriented PZT-type dielectric film capable of forming on a silicon substrate a (111)-oriented PZT-type dielectric film with a high purity and no compositional discrepancy by application of the least necessary quantity of heat, to provide a high-purity (111)-oriented PZT-type dielectric film obtained by utilizing such substrate, and to provide a method for producing a high-purity (111)-oriented PZT-type dielectric film by utilizing such substrate.;SOLUTION: The substrate for the formation of the (111)-oriented PZT-type dielectric film is one obtained by heat-treating a substrate material composed of a silicon substrate and a titanium film and a platinum film successively formed thereon, wherein an orientation control layer containing titanium oxide is formed on the platinum film. The (111)-oriented PZT-type dielectric film is obtained by utilizing the substrate.;COPYRIGHT: (C)2006,JPO&NCIPI