首页> 外国专利> WC-SiC-BASED COMPOSITE WITH HIGH HARDNESS, HIGH YOUNG'S MODULUS AND HIGH FRACTURE TOUGHNESS VALUE, AND ITS MANUFACTURING METHOD

WC-SiC-BASED COMPOSITE WITH HIGH HARDNESS, HIGH YOUNG'S MODULUS AND HIGH FRACTURE TOUGHNESS VALUE, AND ITS MANUFACTURING METHOD

机译:高硬度,高杨氏模量和高断裂韧性值的WC-SiC基复合材料及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a WC-SiC-based composite with high hardness, a high young's modulus and a high fracture toughness value without adding, as a main element, Co causing lowering of hardness and young's modulus; and to provide a method for manufacturing the same.;SOLUTION: This WC-SiC-based composite with high hardness, a high young's modulus and a high fracture toughness value has 1-30 vol.%, preferably 1-20 vol.%, more preferably 5-15 vol.% SiC phase is contained and the balance WC. This method therefor is characterized in that a mixed powder composed of 1-30 vol.%, preferably 1-20 vol.%, more preferably 5-15 vol.% SiC whisker and the balance WC powder is sintered at a sintering temperature of 1,550 to 1,750°C.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:要解决的问题:提供一种具有高硬度,高杨氏模量和高断裂韧性值的WC-SiC基复合材料,而无需添加会降低硬度和杨氏模量的主要元素Co。解决方案:这种具有高硬度,高杨氏模量和高断裂韧性值的WC-SiC基复合材料的含量为1-30vol。%,优选为1-20vol。%,更优选包含5-15体积%的SiC相和余量的WC。该方法的特征在于,在1,550的烧结温度下烧结由1-30vol。%,优选1-20vol。%,更优选5-15vol。%的SiC晶须和余量的WC粉末组成的混合粉末。至1,750°C;版权:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006089351A

    专利类型

  • 公开/公告日2006-04-06

    原文格式PDF

  • 申请/专利权人 AKITA PREFECTURE;

    申请/专利号JP20040279279

  • 发明设计人 SUGIYAMA SHIGEAKI;YASUMATSU HITOSHI;

    申请日2004-09-27

  • 分类号C04B35/56;

  • 国家 JP

  • 入库时间 2022-08-21 21:52:34

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