The target for the transparent conductivity thin film which consists of the indium oxide sintering body which contains the tungsten which features that the target for the transparent conductivity thin film, the transparent conductivity

摘要

PROBLEM TO BE SOLVED: To provide a transparent electroconductive thin-film which is superior in surface smoothness, has a low specific resistance of 6.0×10^-4Ωcm or lower, does not change surface smoothness and specific resistance even when heated at 170°C in annealing treatment, and has high transmittance.;SOLUTION: This method for manufacturing a target comprises mixing a powder of indium oxide with a powder of tungsten oxide so that the thin film formed by sputtering can contain indium oxide as a main component and tungsten and/or molybdenum so as to have an atomic ratio, (W+Mo)/In of 0.0040-0.0470; molding it; and sintering the green compact by heating. The method for forming the transparent electroconductive thin-film composed of a noncrystalline phase on a substrate, is characterized by using the target and keeping the substrate to 120°C or lower in a sputtering method.;COPYRIGHT: (C)2004,JPO