wantaimu programmable memory device

摘要

It is related this invention to the wantaimu programmable memory device. Especially being simple, in order to do to that reliability is high, as for the device it is proposed that kind of memory device that it has MOS selective transistor T1 and the MOS memory transistor T2 which are connected in series with voltage supply line BL and ground Gnd. The device furthermore, has the programming expedient which adds specified voltage Vsel, Vctrl and Vprog to the gate of selective transistor T1, the gate, and voltage supply line BL of memory transistor T2. Memory transistor T2 you insert voltage Vsel, Vctrl and Vprog in addition, in sunatsupubatsuku mode mandatorily, in order to make the electric current cause which makes drain connecting of memory transistor damage T2 thermally as a result, you are selected. It regards the method this invention in the same way, writing the program to wantaimu programmable memory and corresponding.