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Driving method of the nonvolatile flip-flop circuit using a resistance change element

机译:使用电阻变化元件的非易失性触发器电路的驱动方法

摘要

In the nonvolatile flip-flop circuit connected to the resistance variable element first, the second through the control transistor to the storage node first flip-flop circuit, the second store step, the resistance change of the first and second After the low resistance both elements of the resistance variable element in the first and second, while maintaining the low resistance variable resistance element is connected to a storage node that stores a "0" and "1" The high resistance of only the variable resistance element is connected to a storage node that stores "1", connected to the variable resistance element is a low resistance to the storage node recall step, is connected to the variable resistance element is a high resistance driving method of a nonvolatile flip-flop circuit for sequentially to remember a "0" to the storage node that is
机译:在非易失性触发器电路中首先连接到可变电阻元件,第二个通过控制晶体管连接到存储节点的第一触发器电路,第二个存储步骤,第一和第二电阻的变化之后,低电阻两个元件在第一和第二电阻可变元件中,保持低电阻可变电阻元件连接到存储“ 0”和“ 1”的存储节点。仅可变电阻元件的高电阻连接到存储节点。其中存储“ 1”,连接到可变电阻元件是低电阻的存储节点调用步骤,连接到可变电阻元件是非易失性触发器电路的高电阻驱动方法,以顺序地记住“ 0”到存储节点

著录项

  • 公开/公告号JP3733468B2

    专利类型

  • 公开/公告日2006-01-11

    原文格式PDF

  • 申请/专利权人 松下電器産業株式会社;

    申请/专利号JP20040548061

  • 发明设计人 豊田 健治;大塚 隆;

    申请日2003-10-29

  • 分类号G11C11/412;G11C13/00;H03K3/356;H03K3/3562;

  • 国家 JP

  • 入库时间 2022-08-21 21:49:40

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