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Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices
Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices
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机译:超薄化学生长氧化膜作为半导体器件中的掺杂剂扩散阻挡层
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摘要
The invention is a chemically grown oxide layer which prevents dopant diffusion between semiconductor layers. The chemically grown oxide layer may be so thin that it does not form a barrier to electrical conduction, and thus may be formed within active devices such as diodes or bipolar transistors. Such a chemically grown oxide film is advantageously used to prevent dopant diffusion in a vertically oriented polysilicon diode formed in a monolithic three dimensional memory array.
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