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Semiconductor-on-insulator constructions; and methods of forming semiconductor-on-insulator constructions
Semiconductor-on-insulator constructions; and methods of forming semiconductor-on-insulator constructions
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机译:绝缘体上半导体结构;和形成绝缘体上半导体结构的方法
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摘要
The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.
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