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Magnetic semiconductor material and method for preparation thereof
Magnetic semiconductor material and method for preparation thereof
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机译:磁性半导体材料及其制备方法
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摘要
A magnetic semiconductor material having magnetization characteristics and a method for preparing the same is provided.;In the method for preparing the magnetic semiconductor, Mn is vapor-deposited at a thickness of 200 to 300 Å onto a CdGeP2 single crystal (2) while the CdGeP2 single crystal (2) is maintained at a temperature of about 390° C. in a molecular beam epitaxy apparatus (1). The Mn-deposited CdGeP2 single crystal is heated at a temperature of about 510° C. for 1 hour. Thus, a magnetic semiconductor comprising CdMnGeP2 and having magnetization characteristics at room temperature is prepared.
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