MAGNETIC SEMICONDUCTOR MATERIAL AND METHOD FOR PREPARATION THEREOF

摘要

A magnetic semiconductor material having magnetization characteristics and a method for preparing the same is provided. In the method for preparing the magnetic semiconductor, Mn is vapor-deposited at a thickness of 200 to 300 ANGSTROM onto a CdGeP2 single crystal (2) while the CdGeP2 single crystal (2) is maintained at a temperature of about 390 DEG C in a molecular beam epitaxy apparatus (1). The Mn-deposited CdGeP2 single crystal is heated at a temperature of about 510 DEG C for 1 hour. Thus, a magnetic semiconductor comprising CdMnGeP2 and having magnetization characteristics at room temperature is prepared. IMAGE