SEMICONDUCTOR DEVICE HAVING DISLOCATION LOOP LOCATED WITHIN BOUNDARY CREATED BY SOURCE/DRAIN REGIONS AND METHOD OF MANUFACTURE

摘要

A transistor device (100) includes a gate structure (130) formed over a substrate (110) and source/drain regions (150) formed proximate the gate structure (130). The source/drain regions (150) have a boundary that forms an electrical junction with the substrate (110). Dislocation loops (160) are formed in the substrate (110), within the boundary of the source/drain regions (150). The dislocation loops (160) maybe formed by implanting an inert species, such as argon or nitrogen, or implanting a non-inert species, such as germanium, into the substrate and annealing the substrate.