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A METHOD OF PERFORMING RESIST PROCESS CALIBRATION/OPTIMIZATION AND DOE OPTIMIZATION FOR PROVIDING OPE MATCHING BETWEEN DIFFERENT LITHOGRAPHY SYSTEMS
A METHOD OF PERFORMING RESIST PROCESS CALIBRATION/OPTIMIZATION AND DOE OPTIMIZATION FOR PROVIDING OPE MATCHING BETWEEN DIFFERENT LITHOGRAPHY SYSTEMS
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机译:在不同光刻系统之间进行匹配操作的一种进行抗蚀剂过程校准/优化和DOE优化的方法
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摘要
The method of optimizing a process for use with a plurality of lithography systems are disclosed. The method includes the steps of: using a lithographic system of claim 1 (a) determining a calibrated resist model for a given process and a target pattern; (B) utilizing said given process, comprising the step of selecting a lithography system of the second to be used to image the target pattern, a lithography system of the second is to be configured with one of a plurality of diffractive optical elements number, and each of the plurality of diffractive optical elements, and having a variable parameter that corresponds to optimize the performance of the given diffractive optical element; (C) the imaging performance of the lithography system of the second selected one of said plurality of diffractive optical elements, and the use to the selected one of the plurality of diffractive optical elements, said calibrated resist model and the target pattern the step of simulation; And (d) by executing a genetic algorithm which identifies the values of the plurality of diffractive optical elements of the selected raw parameters of optimizing the imaging of the target pattern, optimizing the imaging performance of what the selected one of the plurality of diffractive optical elements and a step of.
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