A METHOD FOR FABRICATING A DAMASCENE OF A SEMICONDUCTOR DEVICE

摘要

The present invention is capable of reducing the number of dual-raise, process reliability of the device to refrain etching method relates to a damascene forming method, forming a first photoresist pattern on predetermined regions of the conductive defrost; Forming a first insulating film on the entire surface of the conductor including the first photosensitive film pattern; Planarizing the first insulating layer until exposing the first photosensitive film pattern; Forming a second photoresist pattern on the first photoresist pattern with the exposure; Forming a second insulating film on the entire surface of the conductor, including the second photosensitive film pattern; Planarizing the second insulation film until the second photosensitive film pattern is exposed; And, as well as forming a trench by removing the second photosensitive film pattern, and removing the first photosensitive film pattern comprises a step of forming a hole.