首页> 外国专利> Target for transparent conductive thin film, Transparent conductive thin film and Manufacturing method thereof, Electrode material for display, and Organic electroluminescence element and solar Cell

Target for transparent conductive thin film, Transparent conductive thin film and Manufacturing method thereof, Electrode material for display, and Organic electroluminescence element and solar Cell

机译:透明导电薄膜用靶,透明导电薄膜及其制造方法,显示用电极材料,有机电致发光元件和太阳能电池

摘要

The present invention has excellent surface smoothness, the resistivity (比抵抗) is 6.0 × 10 -4 or less Ω㎝ low and, even in a heated state of 170 ℃ by not processing the characteristics of the surface smoothness and the specific resistance not changed at all, the transmittance to provide a high transparent conductive thin film, the technical means is such that the oxide thin film after sputter and indium oxide as the main component, contained in a proportion of 0.0040 to 0.0470, tungsten and / or molybdenum as a (W + Mo) / in atomic ratio in combination, forming the indium powder and tungsten oxide powder, by using a target (target) is obtained by heating and sintering the molded body and, while maintaining the substrate below 120 ℃ composed of the amorphous phase on a substrate by sputtering the transparent conductive thin film It is a gain.
机译:本发明具有优异的表面光滑度,电阻率(比电阻)为6.0×10 -4 以下Ω㎝低,并且即使不加热表面的特性,即使在170℃的加热状态下也是如此。光滑度和电阻率完全不变,提供高透明导电薄膜的透射率,技术手段是使溅射后的氧化物薄膜和氧化铟为主要成分,其含量为0.0040至0.0470,钨和/或钼以(W + Mo)/原子比的组合,通过加热和烧结成型体并在保持基板的同时,通过使用靶(靶)形成铟粉和氧化钨粉。在120℃以下由非晶态相组成的基板通过溅射透明导电薄膜而获得。

著录项

  • 公开/公告号KR100606642B1

    专利类型

  • 公开/公告日2006-07-28

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20030034340

  • 发明设计人 아베요시유키;

    申请日2003-05-29

  • 分类号B22F7/04;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:17

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