FABRICATION OF A FAST- SWITCHING THYRISTOR BY PROTON IRRADIATION- A SMART MINORITY CARRIER LIFETIME CONTROL METHOD

摘要

The invention particularly relates to a method for manufacturing a power semiconductor device, for forming the cathode of the power semiconductor device metallization pattern, but the process is proceeding as yangseongjaseon irradiation process for the heat treatment process prior to carrier lifetime control in the end state, in the first step to set the magnetic lens is irradiated through the irradiation energy quantization acceleration system to 4.7MeV; A second step of such vertically incident on the cathode surface of the semiconductor device according to the accelerated proton beam acceleration energy level quantization been set in the first step; And wherein when the second acceleration step the proton beam irradiation is completed through a certain heat environment for a predetermined time in the proton characterized in that it comprises a third step of heat treatment irradiation method according to the high-voltage / high-current semiconductor-switching element for making a small number of high-speed By providing a carrier lifetime control method, in the case of proton acceleration energy is 4.7MeV the best forward voltage (on-state voltage drop V _TM ) drop-off time (turn-off time t _q ) trade-off in accordance with the shows the relationship V _TM , while only just seen the deterioration of 6.9% compared to prior research t _q Joe in advance 80 the effect is improved significantly in 15 .