Vertical trench transistor, has transistor cells with body regions and body contact regions arranged between body regions and contact holes, where dimensions and designs of body regions and body contact regions are selected

摘要

The transistor has transistor cells with source regions (6), body regions (7), gate electrode (9) and contact holes. The contact holes are designed for contacting the source and body regions, where borders of the holes adjoin at a drift region. Body contact regions are arranged between the body regions and the contact holes. The dimensions and designs of the body regions or body contact regions are selected. An independent claim is also included for a method for manufacturing body regions and accordingly body contact regions in a vertical trench transistor.