Rough and fine structures transferring method for dynamic random access memory substrate, involves mapping structures with different lithography techniques in resist using positive lacquer and providing negative lacquer based on epoxy resin

摘要

The method involves applying a resist (1) on a substrate and a resist material that forms the resist is provided such that the resist has sensitivity with respect to different lithography techniques. Rough and fine structures with different lithography techniques are mapped in the same resist using a positive lacquer by pre-exposure implemented as flow exposure. A negative lacquer is provided based on epoxy resin. An independent claim is also included for a method for transferring rough and fine structures into a substrate.