首页> 外国专利> Power semiconductor device, e.g. power transistor or power integrated circuit (IC), has standard housing provided with external connectors which are arranged and electrically connected to flat leads outside of or within standard housing

Power semiconductor device, e.g. power transistor or power integrated circuit (IC), has standard housing provided with external connectors which are arranged and electrically connected to flat leads outside of or within standard housing

机译:功率半导体器件功率晶体管或功率集成电路(IC),具有在标准外壳中设置的外部连接器,这些外部连接器排列并电连接到标准外壳外部或内部的扁平引线

摘要

The device (21) has a standard housing (27) provided with external connectors (1-5) in the form of flat leads. The external connectors are mechanically reinforced for supplying the same voltage or the same signals. The external connectors are arranged and electrically connected to the flat leads (28) provided outside of or within the standard housing. The flat leads are formed with the same thickness as the external connectors. The device may be provided in the form of a power transistor, in which the external connectors serve as the gate, drain and source terminals. An independent claim is included for the power semiconductor device manufacture.
机译:装置(21)具有标准壳体(27),其具有扁平引线形式的外部连接器(1-5)。外部连接器经过机械加固,可提供相同的电压或相同的信号。外部连接器被布置并电连接到设置在标准壳体外部或内部的扁平引线(28)。扁平引线的厚度与外部连接器的厚度相同。该设备可以以功率晶体管的形式提供,其中外部连接器用作栅极,漏极和源极端子。功率半导体器件制造包括独立权利要求。

著录项

  • 公开/公告号DE102005018941A1

    专利类型

  • 公开/公告日2006-11-02

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20051018941

  • 发明设计人 OTEMBRA RALF;

    申请日2005-04-22

  • 分类号H01L23/495;H01L29/78;H01L29/739;H01L21/60;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:16

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