Thin film etching for liquid crystal display device comprises forming layer on substrate, aligning mask having pattern above layer, and removing portion of layer by irradiating substrate with femtosecond laser through mask

摘要

A thin film etching method involves forming a layer on a substrate; aligning a mask having a pattern defined on it above the layer; and removing a portion of the layer by irradiating the substrate with a femtosecond laser through the mask. An independent claim is also included for a method of fabricating a liquid crystal display device, comprising forming a first conductive layer on a first substrate (61); removing a portion of the first conductive layer using a femtosecond laser to form a gate electrode (62); forming a gate insulating layer (63) on the first substrate including the gate electrode; forming a semiconductor layer on the first substrate including the gate insulating layer; removing a portion of the semiconductor layer using the femtosecond laser to form an active layer; forming a second conductive layer on the first substrate including the active layer; removing a portion of the second conductive layer using the femtosecond laser to form a source electrode (66a) and a drain electrode (66b); forming a protecting layer on the first substrate including the source and drain electrodes; removing a portion of the protecting layer to form a contact hole (68) exposing a portion of the source electrode using the femtosecond laser; forming a third conductive layer on the first substrate including the contact hole; and removing a portion of the third conductive layer to form a pixel electrode electrically connected to the drain electrode via the contact hole.