Complementary metal oxide semiconductor image sensor for use in digital still camera, has silicon epitaxial layer on N-type impurity ion area of P-type substrate, using selective epitaxial growth process

摘要

The image sensor has N-type impurity ion area (39) and gate electrode on photodiode area and transistor area of a P-type semiconductor substrate (31), respectively. An oxide film (37) is formed on entire surface of the substrate exposing the N-type impurity ion area. A silicon epitaxial layer (40) doped with p-type impurity ions, is formed on the exposed N-type impurity ion area using selective epitaxial growth process. An independent claim is also included for CMOS image sensor fabrication method.