High voltage generating method for non-volatile memory, involves ramping voltage in response to another ramping voltage, where former ramping voltage has ramping speed slower than another ramping speed

摘要

The method involves generating an initial voltage having a voltage ramping speed. A ramping voltage is generated in response to the initial voltage. The ramping voltage has another ramping speed slower than the previous ramping speed. Another ramping voltage is generated in response to the former ramping voltage, where the latter ramping voltage has a third ramping speed slower than the latter ramping speed. An independent claim is also included for a non-volatile memory device comprising a high voltage generating circuit.