Semiconductor structure e.g. silicon on insulator structure, forming method, involves forming insulating zone in semiconductor substrate up to level of lower surface of mask, in controlled manner before/during removal of mask

摘要

The method involves forming, across a mask (31), in a semiconductor substrate (30), an insulating zone (36) made up of an insulating material, up to a level of a lower surface (35) of the mask, in a controlled manner before/during removal of the mask. The insulating zone is formed by controlled growth of the material, up to the level of the lower surface of the mask. An independent claim is also included for a semiconductor device.