首页> 外国专利> Semiconductor device gate control circuit, has voltage step-up power supply circuit placed between power supply terminal and battery and providing output voltage which is not lower than setpoint at gate control integrated circuit side

Semiconductor device gate control circuit, has voltage step-up power supply circuit placed between power supply terminal and battery and providing output voltage which is not lower than setpoint at gate control integrated circuit side

机译:半导体器件的栅极控制电路,在电源端子和电池之间设置有升压电源电路,并提供不低于栅极控制集成电路侧设定值的输出电压

摘要

The circuit has a battery (1) to deliver a power supply voltage, and a gate control integrated circuit (4) controls a gate of a semiconductor device. A power supply terminal (4a) is arranged on the integrated circuit (4) side. A voltage step-up power supply circuit (11) placed in connection between the terminal and battery receives the voltage and provides an output voltage which is not lower than a setpoint at the circuit (4) side.
机译:该电路具有用于输送电源电压的电池(1),并且栅极控制集成电路(4)控制半导体器件的栅极。电源端子(4a)布置在集成电路(4)侧。置于端子与电池之间的连接中的升压电源电路(11)接收电压,并在电路(4)侧提供不低于设定值的输出电压。

著录项

  • 公开/公告号FR2879376A1

    专利类型

  • 公开/公告日2006-06-16

    原文格式PDF

  • 申请/专利权人 MITSUBISHI DENKI KABUSHIKI KAISHA;

    申请/专利号FR20040052931

  • 发明设计人 GOTOU SHIGETADA;ASAI TAKAMASA;

    申请日2004-12-10

  • 分类号H03K17/14;H02M1/08;

  • 国家 FR

  • 入库时间 2022-08-21 21:17:16

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