PHOTONIC CRYSTAL SEMICONDUCTOR OPTICAL AMPLIFIER, AND INTEGRATED OPTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a photonic crystal semiconductor optical amplifier capable of suppressing the occurrence of laser oscillation at a wavelength corresponding to a band edge, and to provide an integrated optical semiconductor device equipped with it.;SOLUTION: An active layer of the photonic crystal semiconductor optical amplifier is laminated and formed between a lower clad layer and an upper clad layer on a semiconductor substrate. A plurality of holes are arranged in a lattice form so that a two-dimensional periodic structure of refraction index is formed in a plane perpendicular to the lamination direction from the upper clad layer to a position deeper than the underside of the active layer, in the lamination direction of the active layer except a line defect waveguide region for wave-guiding desired light. The light wave-guided within the active layer is amplified in the line defect waveguide region. This optical amplifier comprises an optical attenuator capable of attenuating the light at the band edge of the photonic band structure formed by the periodic structure outside the line defect waveguide region.;COPYRIGHT: (C)2007,JPO&INPIT