Manufacturing method of a thin film bulk acoustic wave resonator and thin film bulk wave acoustic resonator

摘要

A film bulk acoustic resonator, includes first to fourth insulator patterns disposed apart from each other. The third and fourth insulator patterns are disposed opposite the second and first insulator patterns in relation to the first and second insulating patterns, respectively. A bottom conductive layer is disposed above the first and third insulator patterns spreading from a region between the first and second insulator patterns to the third insulator pattern. A piezoelectric film is provided on the bottom conductive layer, disposed above the region between the first and second insulating patterns. A top conductive layer is facing the bottom conductive layer so as to sandwich the piezoelectric film, spreading from the region between the first and second insulator patterns to the fourth insulator pattern.