LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD, INTEGRATED LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD, GROWING METHOD OF NITRIDE- BASED GROUP III-V COMPOUND SEMICONDUCTOR, NITRIDE-BASED GROUP III-V COMPOUND SEMICONDUCTOR GROWING SUBSTRATE, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE LIGHTING APPARATUS, LIGHT EMITTING DIODE DISPLAY, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a light emitting diode and its manufacturing method made very high in light emission efficiency and made very less in variation in characteristics by improving the extraction efficiency of light, and sharply improving crystallinity of the whole of the nitride-based group III-V compound semiconductor layers constituting a light emitting diode.;SOLUTION: After a GaN layer 12 is grown on a saphire substrate 11 subjected to irregularity processing, the GaN layer 12 is left behind only at a bottom of a recess 11a by etching back. A GaN layer 13 is grown on the recess 11a taking the GaN layer 12 as a seed crystal after passing a state where it exhibits a triangle in a cross sectional shape, taking a bottom surface of the recess as a bottom side, to embed the recess 11a. Thereafter, transversal growth is implemented from the GaN layer 13. Further, a GaN-based semiconductor layer including an active layer is grown to form a light emitting diode structure on the GaN layer 13. Using the GaN-based light emitting diode, a light emitting diode backlight or the like is manufactured.;COPYRIGHT: (C)2007,JPO&INPIT