METHODS OF FORMING METAL THIN FILMS, LANTHANUM OXIDE FILMS, AND HIGH DIELECTRIC FILMS FOR SEMICONDUCTOR DEVICES USING ATOMIC LAYER DEPOSITION

摘要

The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.