Impurity diffusion simulation method, impurity diffusion simulation apparatus, and impurity diffusion simulation program

摘要

The as-implanted concentration profile of impurity atoms in the semiconductor substrate is calculated, and a number of interstitial atoms to be generated in the semiconductor substrate by one impurity atom implanted with the ion implantation is set based on a peak concentration of the calculated as-implanted concentration profile of impurity atoms. The concentration profile of interstitial atoms generated in the semiconductor substrate is calculated based on the calculated as-implanted concentration profile of impurity atoms and the set number of interstitial atoms, and the concentration profile of impurity atoms in the semiconductor after the thermal processing is calculated based on the calculated as-implanted concentration profile of impurity atoms and the calculated concentration profile of interstitial atoms.