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Triple well structure and method for manufacturing the same

机译:三重井结构及其制造方法

摘要

The present invention discloses a triple well structure, which includes a substrate of a first conductive type, a deep buried well of a second conductive type, a well of a first conductive type, a well ring of a second conductive type, and a well ring of a first conductive type. The deep buried well of the second conductive type is in the substrate. The well of the first conductive type is disposed over the deep buried well of the second conductive type in the substrate. The well ring of the second conductive type surrounds the well of the first conductive type. The well ring of the first conductive type is between the well of the first conductive type and the well ring of the second conductive type.
机译:本发明公开了一种三阱结构,其包括第一导电类型的衬底,第二导电类型的深埋阱,第一导电类型的阱,第二导电类型的阱环以及阱环。第一导电类型。第二导电类型的深埋阱在衬底中。第一导电类型的阱被布置在衬底中的第二导电类型的深埋阱上方。第二导电类型的阱环围绕第一导电类型的阱。第一导电类型的阱环在第一导电类型的阱和第二导电类型的阱环之间。

著录项

  • 公开/公告号US7285453B2

    专利类型

  • 公开/公告日2007-10-23

    原文格式PDF

  • 申请/专利权人 JIH-WEI LIOU;

    申请/专利号US20060474022

  • 发明设计人 JIH-WEI LIOU;

    申请日2006-06-23

  • 分类号H01L21/336;H01L21/8234;H01L21/8238;

  • 国家 US

  • 入库时间 2022-08-21 21:02:52

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