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High resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in high efficiency pixellated polymer electroluminescent devices
High resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in high efficiency pixellated polymer electroluminescent devices
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机译:用于高效像素化聚合物电致发光器件的高电阻聚(3,4-乙撑二氧噻吩)/聚(苯乙烯磺酸盐)
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摘要
High resistance PEDT/PSS buffer layers are provided for use in electroluminescent devices such as, e.g., OLEDs. In accordance with another embodiment, there are provided OLEDs comprising high resistance PEDT/PSS buffer layers. In accordance with a further embodiment, methods have been developed for decreasing the conductivity of a PEDT/PSS layer cast from aqueous solution onto a substrate, by adding a cyclic ether co-solvent to the aqueous solution of PEDT/PSS prior to casting. In one embodiment, there are provided methods for decreasing the inherent conductivity of a PEDT/PSS layer cast onto a substrate so that this material can be used as an intermediate buffer layer in red, green, blue organic light emitting diodes (RGB OLEDs).
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