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High resistance poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) for use in high efficiency pixellated polymer electroluminescent devices

机译:用于高效像素化聚合物电致发光器件的高电阻聚(3,4-乙撑二氧噻吩)/聚(苯乙烯磺酸盐)

摘要

High resistance PEDT/PSS buffer layers are provided for use in electroluminescent devices such as, e.g., OLEDs. In accordance with another embodiment, there are provided OLEDs comprising high resistance PEDT/PSS buffer layers. In accordance with a further embodiment, methods have been developed for decreasing the conductivity of a PEDT/PSS layer cast from aqueous solution onto a substrate, by adding a cyclic ether co-solvent to the aqueous solution of PEDT/PSS prior to casting. In one embodiment, there are provided methods for decreasing the inherent conductivity of a PEDT/PSS layer cast onto a substrate so that this material can be used as an intermediate buffer layer in red, green, blue organic light emitting diodes (RGB OLEDs).
机译:提供高电阻PEDT / PSS缓冲层以用于电致发光器件,例如OLED。根据另一个实施例,提供了包括高电阻PEDT / PSS缓冲层的OLED。根据另一个实施方案,已经开发了通过在浇铸之前向PEDT / PSS的水溶液中添加环醚助溶剂来降低从水溶液浇铸到基材上的PEDT / PSS层的电导率的方法。在一个实施例中,提供了用于减小流延到衬底上的PEDT / PSS层的固有电导率的方法,使得该材料可用作红色,绿色,蓝色有机发光二极管(RGB OLED)中的中间缓冲层。

著录项

  • 公开/公告号US7264753B2

    专利类型

  • 公开/公告日2007-09-04

    原文格式PDF

  • 申请/专利权人 CHI ZHANG;

    申请/专利号US20050265604

  • 发明设计人 CHI ZHANG;

    申请日2005-11-02

  • 分类号H01B1/12;C08J7/04;C09D165/00;H01L51/30;

  • 国家 US

  • 入库时间 2022-08-21 21:01:23

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