首页> 外国专利> TWO-PHOTON ABSORPTION GENERATED CARRIER LIFETIME REDUCTION IN SEMICONDUCTOR WAVEGUIDE FOR SEMICONDUCTOR BASED RAMAN LASER AND AMPLIFIER

TWO-PHOTON ABSORPTION GENERATED CARRIER LIFETIME REDUCTION IN SEMICONDUCTOR WAVEGUIDE FOR SEMICONDUCTOR BASED RAMAN LASER AND AMPLIFIER

机译:基于半导体拉曼激光和放大器的半导体波导管中的两光子吸收产生的载流子寿命减少

摘要

A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.
机译:具有减少的双光子吸收的基于半导体的拉曼激光器和/或放大器产生载流子寿命。根据本发明实施例的设备包括设置在半导体材料中的光波导和设置在该光波导中的二极管结构。光波导将耦合到泵浦激光器,以接收具有第一波长和第一功率水平的第一光束,以在半导体波导中导致发射第二波长的第二光束。二极管结构将被偏置以从响应于光波导中的两个光子吸收而产生的光波导中清除自由载流子。

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