DIELECTRIC FILM HAVING ABOx-TYPE PEROVSKITE CRYSTALLINE STRUCTURE, CAPACITOR USING THE DIELECTRIC FILM, AND METHOD AND SYSTEM FOR FORMATION OF DIELECTRIC FILM HAVING ABOx-TYPE PEROVSKITE CRYSTALLINE STRUCTURE

摘要

Disclosed is a dielectric film (3) having an ABOx-type perovskite structure which is composed of a laminate of films each having an ABOx-type perovskite structure. The dielectric film (3) can be produced by, onto a first thin film (31) which has an ABOx-type perovskite crystalline structure and has voids (42) having an average diameter equal to or larger than a predetermined value, applying a second coating solution containing particles each of which has an ABOx-type perovskite crystalline structure and which has an average particle diameter smaller than the average diameter of the voids (42) and then heating and firing the resulting product to form a second thin film (32) having an ABOx-type perovskite crystalline structure on the first thin film (31). The dielectric film (3) is characterized in that the density at the boundary between the first thin film (31) and the second thin film (32) is higher than the density at any other area of the dielectric film (3).