METHOD OF CONTROLLING NANOWIRE GROWTH AND DEVICE WITH CONTROLLED-GROWTH NANOWIRE

摘要

Nanowire (260, 360) growth in situ on a planar surface, which is one of a crystalline surface having any crystal orientation, a polycrystalline surface and a non-crystalline surface, is controlled by guiding (160) catalyzed growth from the planar surface in a nano-throughhole (224, 324) of a patterned layer (220, 320) formed on the planar surface, such that the nanowire (260, 360) grows in situ perpendicular to the planar surface. An electronic device (200, 300) includes first and second regions of electronic circuitry (280, 370, 380) vertically spaced by the patterned layer (220, 320). The nano-throughhole (224, 324) of the patterned layer (220, 320) extends perpendicularly between the regions. The first region (324, 376) has the planar surface. The device (200, 300) further includes a nanowire (260, 360) extending perpendicular from a catalyst location on the planar surface of the first region (374, 376) in the nano-throughhole (224, 324). The nanowire (260, 360) forms a component of a nano-scale circuit that connects the regions.